Computer analysis of oxygen adsorption at SnO2 thin films

Optica Applicata

Volumn 37, Issue 4, 2007, Pages 377-386

  Izydorczyk, Weronika ^a   Adamowicz, BogusŁawa ^a  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Depletion layer; Modeling of sensor structures; Nanolayers; Oxygen adsorption; SnO2 thin films

Indexed keywords

ADSORPTION; OXYGEN;

COMPUTER ANALYSIS; OXYGEN ADSORPTION;

GAS ADSORPTION;

EID: 46649090309     PISSN: 00785466     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (23)

1. RANTALA T.S., LANTTO V., RANTALA T.T., Rate equation simulation of the height of Schottky barriers at the surface of oxidic semiconductors, Sensors and Actuators B: Chemical 13-14, 1993, pp. 234-7.
2. 2 surface and near-surface region, Physica Status Solidi A 203(9), 2006, pp. 2241-6.
3. 2 thin films prepared by L-CVD technique and exposed to oxygen and hydrogen, Sensors and Actuators B: Chemical 70(1-3), 2000, pp. 177-81.
4. CHANG S.C., Oxygen chemisorption on tin oxide: Correlation between electrical conductivity and EPR measurements, Journal of Vacuum Science and Technology 17(1), 1980, pp. 366-9.
5. MORRISON S.R., The Chemical Physics of Surfaces, Plenum Press, New York 1997.
6. 2 thin films in the presence of surface adsorbed species, Sensors and Actuators B: Chemical 79(2-3), 2001, pp. 163-70.
7. LANTTO V., ROMPPAINEN P., LEPPÄVUORI S., Response studies of some semiconductor gas sensors under different experimental conditions, Sensors and Actuators 15(4), 1988, pp. 347-57.
8. 2 gas sensors: comparative electrical and spectroscopic studies, Solid State Ionics, Diffusion and Reactions 28-30, 1988, pp. 1631-6.
9. 2S, Sensors and Actuators B: Chemical 4(1-2), 1991, pp. 163-8.
10. SEMANCIK S., COX D.F., Fundamental characterization of clean and gas-dosed tin oxide, Sensors and Actuators 12(2), 1987, pp. 101-6.
11. 4 at elevated temperature investigated by XPS, Surface Science 520(1-2), 2002, pp. 29-34.
12. 2 (110) surface, Chemical Communications, Issue 14, 2000, pp. 1235-6.
13. 2 (110) surface, Surface Science 490(3), 2001, pp. 221-36.
14. RANTALA T.S., LANTTO V., Some effects of mobile donors on electron trapping at semiconductor surfaces, Surface Science 352-354, 1996, pp. 765-70.
15. MORRISON S.R., Mechanism of semiconductor gas sensor operation, Sensors and Actuators 11(3), 1987, pp. 283-7.
16. BARSAN N., WEIMAR U., Conduction model of metal oxide gas sensor, Journal of Electroceramics 7(3), 2001, pp. 143-67.
17. MURAKAMI N., TANAKA K., SASAKI K., IKOHURA K., Proceedings of the International Meeting on Chemical Sensors, Fukuoka, Japan, September 19-22, 1983, p. 187.
18. 2, Journal of Applied Physics 37(5), 1966, pp. 2200-1.
19. FONSTAD CG., REDIKER R.H., Electrical properties of high-quality stannic oxide crystals, Journal of Applied Physics 42(7), 1971, pp. 2911-8.
20. 2 films in a wide temperature range, Physica Status Solidi A 179(1), 2000, pp. 147-52.
21. x thin films, Sensors and Actuators B: Chemical B1(1-6), 1990, pp. 176-82.
22. 2, and CO, Journal of Applied Physics 73(12), 1993, pp. 8371-6.
23. KUPRIYANOW L.Yu., Semiconductor Sensors in Physico-Chemical Studies, Elsevier, Amsterdam 1996.