Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO 2 surface and near-surface region

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 9, 2006, Pages 2241-2246

  Izydorczyk, Weronika ^a   Adamowicz, Boguslawa ^a   Miczek, Marcin ^a   Waczynski, Krzysztof ^a  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

STOICHIOMETRIC DEFECTS; SURFACE DONOR DENSITY; SURFACE POTENTIAL; SURFACE REDUCTION;

CARRIER CONCENTRATION; COMPUTER AIDED ANALYSIS; COMPUTER SIMULATION; DEFECTS; ELECTRIC CONDUCTANCE; ELECTRICAL ENGINEERING; ELECTRONIC PROPERTIES; FERMI LEVEL; NUMERICAL METHODS; OXYGEN; STOICHIOMETRY; SURFACE STRUCTURE; THERMAL EFFECTS;

TIN COMPOUNDS;

EID: 33746399741     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200566016     Document Type: Conference Paper

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