Some effects of mobile donors on electron trapping at semiconductor surfaces

Surface Science

Volumn 352-354, Issue , 1996, Pages 765-770

  Rantala, Tuomo S ^a   Lantto, Vilho ^a  

^a UNIVERSITY OF OULU   (Finland)

Author keywords

Schottky barrier; Semiconducting surfaces; Surface electronic phenomena; Tin oxides

Indexed keywords

BAND STRUCTURE; ELECTRONS; INTERFACIAL ENERGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SURFACES; TIN COMPOUNDS;

BAND BENDING; ELECTRON TRAPPING; GRAIN GEOMETRIES; MOBILE DONORS; ONE DIMENSIONAL; SEMICONDUCTOR SURFACES; TIN OXIDES; TWO DIMENSIONAL;

SURFACE PHENOMENA;

EID: 0030141432     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01225-7     Document Type: Article

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