Contact effects and extraction of intrinsic parameters in poly(3-alkylthiophene) thin film field-effect transistors

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Deen, M Jamal ^a   Kazemeini, Mehdi H ^a   Holdcroft, S ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION; GOLD; METALLIZING; PHOTOACOUSTIC EFFECT; PLASTIC FILMS; POLYMER FILMS; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS;

(001) PARAMETER; (E ,2E) THEORY; AMERICAN INSTITUTE OF PHYSICS (AIP); BOTTOM CONTACT (BC); CONTACT EFFECTS; CONTACT ELECTRODES; CURRENT VOLTAGE (I V) CHARACTERISTICS; DEVICE PARAMETERS; FIELD EFFECT TRANSISTOR (FET); GATE VOLTAGES; INTRINSIC CHANNELS; INTRINSIC PARAMETERS; MODEL BASED (OPC); POLY(3-ALKYLTHIOPHENE); POLY(3-OCTYL THIOPHENE); REVERSE MODE; SPACE CHARGE LIMITED (SCL);

FIELD EFFECT TRANSISTORS;

EID: 46449118822     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2942400     Document Type: Article

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