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Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 230-234

Surface structure of InGaAs/InP(0 0 1) ordered alloy during and after growth

(6) Mori, Takahiro a,b Hanada, Takashi a Morimura, Toshiharu b Shin, Keesam b Makino, Hisao a Yao, Takafumi a,b

a TOHOKU UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

Reflectance anisotropy spectroscopy; Reflectance difference spectroscopy; Spontaneous ordering; Surface structure

Indexed keywords

ANISOTROPY; BIPOLAR TRANSISTORS; CATIONIC POLYMERIZATION; CRYSTAL LATTICES; INDIUM ALLOYS; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CHIZHOV MODEL; REFLECTANCE ANISOTROPY SPECTROSCOPY; REFLECTANCE DIFFERENCE SPECTROSCOPY; SPONTANEOUS ORDERING;

SURFACE STRUCTURE;

EID: 4644327954 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.07.027 Document Type: Conference Paper

Times cited : (9)

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