Ferroelectric properties of very thin Pb(Zr0.4Ti 0.6)O3 film determined by kelvin force microscope

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6739-6742

  Jang, Dongmin ^a   Heo, Jinhee ^a   Insook, Y I ^b   Chung, Ilsub ^a  

^a Sungkyunkwan University   (South Korea)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

KFM; Polarization; PZT film thickness; Retention; Surface potential

Indexed keywords

ATOMIC FORCE MICROSCOPY; FERROELECTRIC DEVICES; POLARIZATION;

KFM; PZT FILM THICKNESS; RETENTION; SURFACE POTENTIAL;

THIN FILMS;

EID: 4644318212     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6739     Document Type: Article

References (11)

1. H. Doi and K. Kegeyama: J. Sol-Gel Sci & Tech. 16 (1999) 21.
2. K. Matsuura, K. Takai, T. Tamura, H. Ashida and S. Otani: IEICE Trans. Electron E-81-C 4 (1998) 528.
3. T. Mihara, H. Watanabe, and C. A. Araujo: Jpn. J. Appl. Phys. 32 (1993) 4168.
4. Y. Fujisaki, K. Kushida, H. Miki and Y. Shimamoto: IEICE Trans. Electron E-81-C 4 ( 1998) 518.
5. J. Han and T. Ma: Appl. Phys. Lett. 71 (1997) 1267.
6. T. Tybell, C. H. Ahn and J.-M. Triscone: Appl. Phys. Lett. 72 (1998) 1454.
7. C. S. Ganpule, A. Stanishevsky, Q. Su, S. Aggaarwal, J. Melngailis, E. Williams and R. Ramesh: Appl. Phys. Lett. 75 (1999) 409.
8. R. Luthi, H. Haefke, K. P. Meyer, E. Meyer, L. Howald and H. J. Guntherodt: J. Appl. Phys 74 (1993) 7461.
9. X. Q. Chen, H. Tamada, T. Horiuchi, K. Matsushige, S. Watanabe, M. Kawai and P. S. Weiss: J. Vac. Sci. Technol. B 17 (1999) 1930.
10. A. Gruvermann, H. Tokumoto, A. S. Parakash, S. Aggarwal, B. Yang, M. Wuttig, R. Ramesh, O. Ausiello and T. Venkatesan: Appl. Phys. Lett. 71 (1997) 3492.
11. W. Jo, D. C. Kim and J. W. Hong: Appl. Phys. Lett. 76 (2000) 39.