Optical properties of high energy tin (Sn5+) ion irradiated metal-organic chemical vapor deposition grown GaN on sapphire

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 A, 2004, Pages 4150-4152

  Perumal, Premchander ^a   Ganaprakasam, Sonia ^a   Krishnan, Baskar ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

Absorption; GaN; Irradiation; Minority carrier lifetime decay; Photoluminescence

Indexed keywords

ABSORPTION; CORRELATION METHODS; EPITAXIAL GROWTH; IONS; IRRADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR MATERIALS; TIN COMPOUNDS;

BAND-EDGE; HIGH-ENERGY IRRADIATION; ION FLUENCES; MINORITY CARRIER LIFETIME DECAY;

GALLIUM NITRIDE;

EID: 4644268596     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4150     Document Type: Article

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