Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire

Journal of Luminescence

Volumn 72-74, Issue , 1997, Pages 696-700

  Monteiro, T ^a   Pereira, E ^a   Correia, M R ^a   Xavier, C ^a   Hofmann, D M ^b   Meyer, B K ^b   Fischer, S ^b   Cremades, A ^c   Piqueras, J ^c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

GaN; Yellow luminescence

Indexed keywords

BAND STRUCTURE; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; LIGHT EMISSION; MAGNETIC RESONANCE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTRUM ANALYSIS;

BROAD EMISSION BAND; GALLIUM NITRIDE; OPTICALLY DETECTED MAGNETIC RESONANCE DATA; TIME RESOLVED SPECTROSCOPY;

LUMINESCENCE OF INORGANIC SOLIDS;

EID: 0031168441     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(96)00328-6     Document Type: Article

References (5)

1. D. Volm, K. Oettinger, T. Sreibl, D. Kovalev, M. Ben-Chorin, J. Diener, B.K. Meyer, J. Majewski, L. Eckey, A. Hoffmann, H. Amano, I. Akasaki, K. Hiramatsu and T. Dtechprohm, Phys. Rev. B 53 (1996) 16543.
2. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10 (1992) 1237.
3. D.M. Hofmann, D. Kovalev, G. Steude, B.K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprom, H. Amano and I. Akasaki, Phys. Rev. B 52 (1995) 16702.
4. D.M. Hofmann, D. Kovalev, G. Steude, D. Volm, B.K. Meyer, C. Xavier, T. Monteiro, E. Pereira, E.N. Mokov, A. Amano and I. Akasaki, Mat. Res. Soc Symp. Boston, Vol. 395 (1996) 619.
5. A. Cremades, J. Piqueras, C. Xavier, T. Monteiro, E. Pereira, B.K. Meyer, D.M. Hofmann and S. Fischer, Mater. Sci. Eng. B42 (1996) 230.