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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 235-240

Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability

(3) Boudinov, H a,b De Souza, J P a Jagadish, C b

a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL (Brazil)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

InP; Ion bombardment; Isolation; Sheet resistance; Thermal stability

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ION BOMBARDMENT; PROTON IRRADIATION; SEMICONDUCTING INDIUM PHOSPHIDE; THERMODYNAMIC STABILITY;

ELECTRICAL ISOLATION;

SEMICONDUCTING FILMS;

EID: 17044455388 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00529-2 Document Type: Conference Paper

Times cited : (9)

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