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Volumn 19, Issue 8, 2004, Pages 2389-2393

Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ERBIUM; FILM GROWTH; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUENCHING; STOICHIOMETRY;

EID: 4644230083     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0292     Document Type: Article
Times cited : (8)

References (18)
  • 4
    • 4644368326 scopus 로고    scopus 로고
    • edited by S. Coffa, A. Polman, and R.N. Schwartz Mater. Res. Soc. Symp. Proc. 422, Pittsburgh, PA
    • Rare Earth Doped Semiconductors II, edited by S. Coffa, A. Polman, and R.N. Schwartz (Mater. Res. Soc. Symp. Proc. 422, Pittsburgh, PA, 1996).
    • (1996) Rare Earth Doped Semiconductors II


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.