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Acta Physica Polonica A

Volumn 106, Issue 2, 2004, Pages 265-272

Misfit dislocations study in MOVPE grown lattice-mismatched InGaAs/GaAs heterostructures by means of DLTS technique

(4) Gelczuk, L a Dabrowska Szata M a Jozwiak G a Radziewicz, D a

a WROCLAW UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TERNARY SYSTEMS;

EPITAXIAL LAYERS; HIGH SPEED ELECTRONIC DEVICES; LATTICE MISMATCH; TERNARY COMPOUNDS;

DISLOCATIONS (CRYSTALS);

EID: 4644226282 PISSN: 05874246 EISSN: None Source Type: Journal
DOI: 10.12693/APhysPolA.106.265 Document Type: Conference Paper

Times cited : (7)

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