Deformation of a deep-level transient spectroscopy spectrum by an inhomogeneous carrier concentration depth profile

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1307-1313

  Ito, Akira ^a   Tokuda, Yutaka ^b  

^a SUZUKA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b AICHI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Deep level transient spectroscopy; Evaluation; Inhomogeneous carrier concentration; Point defects; Semiconductor; Simulation

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; POINT DEFECTS; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

INHOMOGENEOUS CARRIER CONCENTRATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036721724     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00077-1     Document Type: Article

References (8)

1. Deep level transient spectroscopy: A new method to characterize traps in semiconductors
2. Studies of neutron-produced defects in silicon by deep-level transient spectroscopy
3. Carrier profile evaluation for a Zn-doped InGaAsP/InGaAsP multiquantum well using a low-temperature capacitance-voltage method
4. Electron distribution and capacitance-voltage profiles of multiple quantum well structure from self-consistent simulations
5. 1-xAs/GaAs heterostructures containing deep traps
6. Transient capacitance spectroscopy in heavily compensated semiconductors
7. Accurate determination of the free carrier capture kinetics of deep traps by space-charge methods
8. 1-xAs interface grown by molecular-beam epitaxy