Effects of tetraethoxysilane vapor treatment on the cetyltrimethylammonium bromide-templated silica mesoporous low-k thin film with 3D close-packed array of spherical pores

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 405-410

  Han, Choo Kyung ^a   Jung, Sang Bae ^a   Park, Hyung Ho ^a  

^a Yonsei University   (South Korea)

Author keywords

CTAB; EISA; Low dielectric; Mesoporous material; Spin coating; TEOS vapor treatment

Indexed keywords

CALCINATION; DEPOSITION; DIELECTRIC MATERIALS; EVAPORATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MESOPOROUS MATERIALS; MICROELECTRONICS; OPTIMIZATION; PORE SIZE; SELF ASSEMBLY; SILANES; SILICA; SPIN COATING; SURFACE TREATMENT; X RAY DIFFRACTION ANALYSIS;

BRAGG-BRENTANO GEOMETRY; EVAPORATION-INDUCED SELF-ASSEMBLY (EISA); LOW DIELECTRICS; TEOS VAPOR TREATMENT;

THIN FILMS;

EID: 4644223238     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(04)00979-1     Document Type: Conference Paper

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