Prediction and control of NBTI - Induced SRAM Vccmin drift

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Lin, J C ^a   Oates, A S ^a   Tseng, H C ^a   Liao, Y P ^a   Chung, T H ^a   Huang, K C ^a   Tong, P Y ^a   Yau, S H ^a   Wang, Y F ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY;

PREDICTION AND CONTROL;

STATIC RANDOM ACCESS STORAGE;

EID: 46049116512     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346779     Document Type: Conference Paper

References (8)

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3. V. Ramadurai, N. Rohrer, C. Gonzalez, "SRAM operational voltage shifts in the presence of gate oxide defects in 90 nm SOI", IRPS proceedings, 2006, p. 270
4. S. Chakravarthi, A.T. Krishnan, V. Reddy, C.F. Machala and S. Krishnan," A Comprehensive Framework For Predictive Modeling of Negative Bias Temperature Instabilit", IRPS proceedings, 2004, p. 273
5. G. Cellere et al, IEEE International Conference on Integrated Circuit Design and Technology, 2004, p. 303.
6. V. Reddy, A. T. Krishnan, A. Marshall, J. Rodriguez, S. Natarajan, T. Rost, and S. Krishnan, "Impact of Negative Bias Temperature Instability on Digital Circuit Reliability", IRPS proceedings, 2002, p. 248.
7. S. Kumar et al, IEEE International Conference on Integrated Circuit Design and Technology, 2006.
8. Yung-Huei Lee, Neal Mielke, Babak Sabi, Stefan Stadler, Ramez Nachman, and Sam Hu, "Effect of pMOST Bias-Temperature Instability on Circuit Reliability Performance", IEDM Tech. Dig., Dec. 2003