Realistic projections of product fails from NBTI and TDDB

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 541-544

  Haggag, A ^a   Moosa, M ^a   Liu, N ^a   Burnett, D ^a   Abeln, G ^a   Kuffler, M ^a   Forbes, K ^a   Schani, P ^a   Shroff, M ^a   Hall, M ^a   Paquette, C ^a   Anderson, G ^a   Pan, D ^a   Cox, K ^a   Higman, J ^a   Mendicino, M ^a   Venkatesan, S ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION RATES; EXTRINSIC FAIL MECHANISMS; TRANSISTOR SHIFTS;

FORMAL LOGIC; MICROPROCESSOR CHIPS; STATISTICS; VOLTAGE CONTROL;

FAILURE ANALYSIS;

EID: 34250733486     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251276     Document Type: Conference Paper

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