Mobility and strain effects on <110>/(110) SiGe channel pMOSFETs for high current enhancement

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Pan, J W ^a   Liu, P W ^a   Chang, T Y ^a   Chiang, W T ^a   Tsai, C H ^a   Lin, Y H ^a   Tsai, C T ^a   Ma, G H ^a   Chien, S C ^a   Sun, S W ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; EPITAXIAL GROWTH; OPTICAL DESIGN; PAINTING; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; SUBSTRATES;

CURRENT GAINS; HIGH CURRENTS; HIGH MOBILITY CHANNELS; ON CURRENTS; P-MOSFETS; PIEZORESISTANCE COEFFICIENTS; SI PROCESSES; SI SUBSTRATE; STRAIN EFFECTS; SUBSTRATE ORIENTATIONS; ULTRA-HIGH;

MOSFET DEVICES;

EID: 46049106391     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346812     Document Type: Conference Paper

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