Numerical modeling of thermally-stimulated currents for the density-of-states determination in thin-film semiconductors

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1028-1031

  Main, C ^a   Souffi, N ^b   Reynolds, S ^c   Bruggemann R ^b  

^a UNIVERSITY OF DUNDEE   (United Kingdom)

^b UNIVERSITY OF OLDENBURG   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Amorphous semiconductors; Electrical and electronic properties; Modeling and simulation; Silicon

Indexed keywords

COMPUTER SIMULATION; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; NONLINEAR EQUATIONS; NUMERICAL ANALYSIS; SEMICONDUCTOR MATERIALS; SILICON; STIMULATED EMISSION; TEMPERATURE DISTRIBUTION;

AMORPHOUS SEMICONDUCTORS; DENSITY OF STATES; STIMULATED CONDUCTIVITY; THIN FILM SEMICONDUCTORS;

THIN FILMS;

EID: 33745441714     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.11.127     Document Type: Article

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