Proton radiation effects on MEMS silicon strain gauges

IEEE Transactions on Nuclear Science

Volumn 55, Issue 3, 2008, Pages 1714-1718

  Marinaro, Damian G ^a,b   McMahon, Phillip ^b   Wilson, Alan ^b  

^a IEEE

^b DEFENCE SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

Micromechanical devices; Piezoresistive devices; Radiation effects

Indexed keywords

COMPOSITE MICROMECHANICS; ELECTROMECHANICAL DEVICES; MEMS; MICROELECTROMECHANICAL DEVICES; PHOTOACOUSTIC EFFECT; PROTON IRRADIATION; PROTONS; RADIATION; RADIATION EFFECTS; SILICON; STRAIN; STRAIN GAGES; STRUCTURAL HEALTH MONITORING; SULFATE MINERALS; THICKNESS MEASUREMENT;

(100) SILICON; APPLIED (CO); HEALTH-MONITORING; MICRO STRAIN; MICRO-ELECTRO- MECHANICAL SYSTEM (MEMS); PIEZORESISTIVE; PROTON RADIATION EFFECTS; SINGLE CRYSTALLINE SILICON (SCS); STRAIN GAUGE;

GAGES;

EID: 45849102424     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.921933     Document Type: Conference Paper

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