Overcoming contact hurdles for investigating lower dimensional structures in undoped heterostructures

ECS Transactions

Volumn 11, Issue 5, 2007, Pages 75-79

  Sarkozy, S ^a   Gupta, K Das ^a   Sfigakis, F ^a   Farrer, I ^a   Beere, H ^a   Harrell, R ^a   Ritchie, D ^a   Jones, G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIERS; ELECTRIC CONTACTORS; ELECTRON-ELECTRON INTERACTIONS; ENERGY GAP; GALLIUM ARSENIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; OHMIC CONTACTS; SEMICONDUCTING GERMANIUM; WIDE BAND GAP SEMICONDUCTORS;

ATTRACTIVE SYSTEMS; CONTACT SYSTEMS; DIMENSIONAL STRUCTURES; GAAS/ALGAAS HETEROSTRUCTURES; MODULATION-DOPED; PROCESS APPROACH; SYSTEMATIC STUDY; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

TWO DIMENSIONAL ELECTRON GAS;

EID: 45749144713     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2783859     Document Type: Conference Paper

References (8)

1. C.W.J Beenakker and H. van Houten, Solid State Physics, 44 (1991)
2. R Harrell et al., Applied Physics Letters, 74, 2328 (1999)
3. Willett et al. Applied Physics Letters, 89, 242107 (2006)
4. Lu et al., Applied Physics Letters, 90, 112113 (2007)
5. L. Pfeiffer and K.W. West, Physica E, 20, 57 (2003)
6. Huang et al. Physical Review Letters, 98, 225801 (2007)
7. A. Ghosh et al. Physical Review Letters, 95, 066603 (2005)
8. C. Siegert et al. Nature Physics, 3, 315 (2007)