Further insight into the physics and modeling of floating-body capacitorless DRAMs

IEEE Transactions on Electron Devices

Volumn 52, Issue 11, 2005, Pages 2447-2454

  Villaret, Alexandre ^a   Ranica, Rosella ^a   Malinge, Pierre ^a   Masson, Pascal ^b   Martinet, Bertrand ^a   Mazoyer, Pascale ^a   Candelier, P ^a   Skotnicki, Thomas ^a  

^a STMICROELECTRONICS   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Bipolar transistors; DRAM; Floating body effect; Modeling; MOS devices

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITORS; CMOS INTEGRATED CIRCUITS; EQUIVALENT CIRCUITS; IMPACT IONIZATION; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

CAPACITORLESS DRAM MODELING; FLOATING-BODY EFFECT; PARASITIC BIPOLAR CONDUCTION;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 27744607423     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.857933     Document Type: Article

References (10)

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