Modelling of a DBR laser based on Raman effect in a silicon-on-insulator rib waveguide

Semiconductor Science and Technology

Volumn 23, Issue 6, 2008, Pages

  De Leonardis, Francesco ^a   Dimastrodonato, Valeria ^a   Passaro, Vittorio M N ^a  

^a POLITECNICO DI BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BRAGG CELLS; DISTRIBUTED BRAGG REFLECTORS; LASER OPTICS; LASERS; MICROSENSORS; NONMETALS; PULSED LASER APPLICATIONS; RAMAN SCATTERING; SILICON; WAVE ENERGY CONVERSION; WAVEGUIDES;

CONTINUOUS WAVE (C.W.); DBR LASERS; DEVICE PARAMETERS; DISTRIBUTED BRAGG REFLECTOR (DBR) LASERS; OUTPUT POWERS; PULSED LASERS; RIB WAVEGUIDES; SILICON ON INSULATOR (SOI); STIMULATED RAMAN; THIRD ORDER NONLINEARITIES; TIME DOMAIN (OCT);

PULSED LASER DEPOSITION;

EID: 45749113719     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/6/064008     Document Type: Article

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