The role of Al2O3 buffer layer in the growth of aligned CNTs

Advanced Materials Research

Volumn 32, Issue , 2008, Pages 29-32

  Lai, M K ^a   Mohamed, N M ^a   Begam, K M ^a  

^a DEPARTMENT OF CHEMICAL ENGINEERING   (Malaysia)

Author keywords

Al2O3 buffer layer; Aligned MWNTs; Chemical vapor deposition; Electron beam evaporation

Indexed keywords

ALUMINUM; CARBON; COMPUTER NETWORKS; CUBIC BORON NITRIDE; FULLERENES; GROWTH (MATERIALS); INTERFACES (MATERIALS); MATERIALS; MATERIALS SCIENCE; METROPOLITAN AREA NETWORKS; MULTIWALLED CARBON NANOTUBES (MWCN); NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; NETWORK PROTOCOLS; PIGMENTS; TECHNOLOGY;

CARBON ATOMS; FUNCTIONAL DEVICES; IF THERE ARE; INTERNATIONAL CONFERENCES; MATERIALS SCIENCE AND TECHNOLOGY; MULTI WALLED; MULTIPLE WALLS; MULTIWALLED CARBON NANOTUBES (MW-CNT); NANO TUBE;

CARBON NANOTUBES;

EID: 45749088120     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/0-87849-475-8.29     Document Type: Conference Paper

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