Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Huh, Sungmin ^a   Kim, Hoon ^a   Yoon, Gisung ^a   Choi, Jaehyuck ^a   Lee, Han Shin ^a   Lee, Dong Gun ^a   Ahn, Byungsup ^a   Seo, Hwan Seok ^a   Kim, Dongwan ^a   Kim, Seong Sue ^a   Cho, Han Ku ^a   Watanabe, Takeo ^b   Kinoshita, Hiroo ^b  

^a SAMSUNG Electronics   (South Korea)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

Carbon contamination; EUV; Lifetime; Mask; MET; Si Ru capping layer

Indexed keywords

CAPPING MATERIALS; CARBON CONTAMINATION; CARBON DEPOSITION; EUV; LIFETIME; MET; RU CAPPING LAYERS; WAFER PRINTABILITY;

MASKS; MULTILAYERS; SILICON; SILICON WAFERS;

CONTAMINATION;

EID: 45549104381     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772412     Document Type: Conference Paper

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