30nm half-pitch metal patterning using Motif™ CD shrink technique and double patterning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Versluijs, Janko ^a   De Marneffe, J F ^a   Goossens, Danny ^a   Op De Beeck, Maaike ^a   Vandeweyer, Tom ^a   Wiaux, Vincent ^a   Struyf, Herbert ^a   Maenhoudt, Mireille ^a   Brouri, Mohand ^b,c   Vertommen, Johan ^b,c   Kim, Ji Soo ^d   Zhu, Helen ^d   Sadjadi, Reza ^d  

^a IMEC   (Belgium)

^b LAM RESEARCH CORPORATION   (Belgium)

^c IMEC ^*

^d LAM RESEARCH CORPORATION   (United States)

Author keywords

CD shrink; Double patterning; Metal hard mask; Motif; OPC; Single damascene

Indexed keywords

CADMIUM; CADMIUM COMPOUNDS; CRACK DETECTION; MODAL ANALYSIS; PHOTOACOUSTIC EFFECT; SODIUM; TIN; TINNING; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

DOUBLE PATTERNING; HARD MASKS; IMMERSION LITHOGRAPHY (IML); INTERCONNECT STRUCTURES; LOW K DIELECTRICS; METAL PATTERNING; OPTICAL MICRO LITHOGRAPHY; PROCESS STEPS; PROXIMITY EFFECTS; WATER-BASED;

LITHOGRAPHY;

EID: 45449107781     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.774139     Document Type: Conference Paper

References (7)

1. M. Maenhoudt, J. Versluijs, H. Struyf, J. Van Olmen, and M. Van Hove, "Double Patterning Scheme for Sub-0.25 k1 Single Damascene Structure at NA=0.75, λ.= 193nm", Proc. of SPIE, Vol. 5754, p. 1508-1518, 2006
2. V. Wiaux, et al., "193nm Immersion Lithography towards 32nm hp using Double Patterning", 3rd International Symposium on Immersion Lithography, Kyoto, 2-5 October, 2006.
3. M. Op de Beeck, J. Versluijs, V. Wiaux, T. Vandeweyer, I. Ciofi, H. Struyf, D. Hendrickx, and J. Van Olmen, "Manufacturability issues with Double Patterning for 50nm half pitch single damascene applications using Relacs® shrink and corresponding OPC", Proc. of SPlE Vol. 6520, 652001, 2007.
4. J-Y. Yoon, M. Hata, J-H. Hah, H-W. Kim, S-G. Woo, H-K. Cho, and W-S. Han, "Strategy for sub-80nm contact holes patterning considering device fabrication", Proc. of SPIE, Vol. 5376, p. 196-204, 2004.
5. S. Satyanarayana and C. Cohan," Evaluation of process based resolution enhancement techniques to extend 193nm lithography," Proc. of SPIE, Vol. 5039, p. 257-268, 2003.
6. M. Op de Beeck, J. Versluijs, Zs. Tökei, S. Demuynck, J.-F. De Marneffe, W. Boullart, S. Vanhaelemeersch, H. Zhu, P. Cirigliano, E. Pavel, R. Sadjadi, and J. Kim, "A novel plasma-assisted shrink process to enlarge process windows of narrow trenches and contacts for 45-nm node applications and beyond", Proc of SPIE, Vol. 6519, 65190U, 2007.
7. M. Dusa, J. Quaedackers, O. F. A. Larsen, J. Meessen, E. van der Heijden, G. Dicker, O. Wismans, P. de Haas, K. van Ingen Schenau, J. Finders, B. Vleeming, G. Storms, P. Jaenen, S. Cheng, and M. Maenhoudt, "Pitch doubling through dual-patterning lithography challenges in integration and litho budgets", Proc. of SPIE, Vol. 6520, 65200G, 2007.