A novel plasma-assisted shrink process to enlarge process windows of narrow trenches and contacts for 45nm node applications and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 1, 2007, Pages

  De Beeck, Maaike Op ^a   Versluijs, Janko ^a   Tökei, Zsolt ^a   Demuynck, Steven ^a   De Marneffe, J F ^a   Boullart, Werner ^a   Vanhaelemeersch, Serge ^a   Zhu, Helen ^b   Cirigliano, Peter ^b   Pavel, Elizabeth ^b   Sadjadi, Reza ^b   Kim, Jisoo ^b  

^a IMEC   (Belgium)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

CD shrink; Contact; Plasma assisted shrink; Process latitude; Process window improvement; Trench; Via

Indexed keywords

CONDUCTING POLYMERS; DEPOSITION; LITHOGRAPHY; OPTICAL INTERCONNECTS; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SHRINKAGE; TRENCHING;

CD SHRINK; PLASMA-ASSISTED SHRINK; PROCESS LATITUDE; PROCESS WINDOW IMPROVEMENT;

PLASMA DIAGNOSTICS;

EID: 35148866733     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.713401     Document Type: Conference Paper

References (4)

1. G. Zhang, M. Terry, S. O'Brien, R. Soper, M. Mason, W. Kim, C. Wang, S. Hansen, J. Lee, J. Ganeshan, "65nm node gate pattern using attenuated phase shift mask with off-axis illumination and sub-resolution assist features," Proceedings of SPIE Vol. 5754, p. 760-772, 2005.
2. J-Y. Yoon, M. Hata, J-H. Hah, H-W. Kim, S-G. Woo, H-K. Cho, W-S. Han, "Strategy for sub-80nm contact holes patterning considering device fabrication," Proceedings of SPIE Vol. 5376, p. 196-204, 2004.
3. S. Satyanarayana, C. Cohan," Evaluation of process based resolution enhancement techniques to extend 193nm lithography," Proceedings of SPIE Vol. 5039, p. 257-268, 2003.
4. S. Demuynck, et al. (results to be published).