Double patterning requirements for optical lithography and prospects for optical extension without double patterning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Hazelton, Andrew J ^a   Wakamoto, Shinji ^a   Hirukawa, Shigeru ^a   McCallum, Martin ^b   Magome, Nobutaka ^a   Ishikawa, Jun ^a   Lapeyre, Céline ^c   Guilmeau, Isabelle ^c   Barnola, Sébastien ^c   Gaugiran, Stéphanie ^c  

^a NIKON CORPORATION   (Japan)

^b Nikon Precision Europe GmbH   (United Kingdom)

^c CEA LETI   (France)

Author keywords

32 nm node; CD uniformity; Double patterning; Exposure tool budget; Overlay

Indexed keywords

(T ,S)-SPLITTING; ARF LITHOGRAPHY; CD UNIFORMITY (CDU); COMPLEX FORMS; DEPOSITION PROCESSING; DEVICE MANUFACTURERS; DIFFERENT TYPES; DOUBLE EXPOSURE; DOUBLE PATTERNING; EXPERIMENTAL RESULTS; LINE DENSITY; OPTICAL EXTENSION; OPTICAL LITHOGRAPHY; OPTICAL MICRO LITHOGRAPHY; PROCESS REQUIREMENTS; ROAD-MAPS;

BUDGET CONTROL; CADMIUM; CADMIUM COMPOUNDS; PERCOLATION (SOLID STATE); PHOTOLITHOGRAPHY;

DYNAMIC POSITIONING;

EID: 45449097439     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.771914     Document Type: Conference Paper

References (10)

1. M. Burkhardt, et al., "Dark Field Double Dipole Lithography (DDL) for Back-End-of-Line Processes," Proc. of SPIE Vol. 6520, 65200K (2007).
2. H. Nakamura, et al., "Ultra-low k1 oxide contact hole formation and metal filling using resist contact hole pattern by Double L&S Formation Method." Proc. of SPIE Vol. 6520, 65201E (2007).
3. Y. Trouiller, et al., "32 nm SOC printing with double patterning, regular design, and 1.2 NA immersion scanner." Proc. of SPIE Vol. 6520, 65201D (2007).
4. H. Ohki, et al., "Experimental study on non-linear multiple exposure method." Proc. of SPIE Vol. 3051, pp. 85-93 (1997)
5. C. Lim, et al., "Positive and Negative Tone Double Patterning Lithography." Proc. of SPIE Vol. 6154, 615410 (2006).
6. R-H. Kim, et al., "Double Exposure Using 193nm Negative Tone Photoresist." Proc. of SPIE Vol. 6520, 65202M (2007).
7. RHEM private communication
8. W. Jung et al., "Patterning with amorphous carbon spacer for expanding the resolution limit of current lithography tool." Proc. of SPIE Vol. 6520, 65201C (2007).
9. th Symposium on Immersion Lithography, PR-02 (2007).
10. A.J. Toprac, "AMD's Advanced Control of Poly-gate Critical Dimension," Process, Equipment, and Materials Control in IC Manufacturing V, A.J. Toprac and Kim Dang (editors), Proceedings of SPIE, 3882, 62 (1999).