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Volumn 6924, Issue , 2008, Pages

Manufacturing implementation of 32nm SRAM using ArF immersion with RET

Author keywords

CD uniformity; Double patterning technique(DPT); Optical proximity correction (OPC); Resolution enhancement technique (RET)

Indexed keywords

(E ,3E) PROCESS; CONTROL METHODOLOGY; DESIGN RULES; EMPIRICAL DATA; EXPOSURE PARAMETERS; EXPOSURE TOOLS; HYPER-NA; IMMERSION EXPOSURE; IMMERSION PROCESSING; MASK DATA; MASK DATA PREPARATION (MDP); MASK DESIGNS; MASK MAKING; METAL LAYERS; OPTICAL MICRO LITHOGRAPHY; PATTERN SIZES; POLY (PSS) ,; PROCESS DEVELOPMENTS; PROCESS PERFORMANCE; PROCESS WINDOWS; PRODUCTION ENVIRONMENTS; RESOLUTION-ENHANCEMENT TECHNOLOGY (RET); SEMICONDUCTOR MANUFACTURING; SRAM CELLS; TARGET DESIGNS; ULTRA HIGH NA; WAFER PRINTING;

EID: 45449094393     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.773137     Document Type: Conference Paper
Times cited : (5)

References (4)
  • 1
    • 36248951567 scopus 로고    scopus 로고
    • Implementation of Double Dipole Lithography for 45nm node poly and diffusion layer manufacturing
    • M. H. Wu, et al, "Implementation of Double Dipole Lithography for 45nm node poly and diffusion layer manufacturing", SPIE Vol. 4691, 2007.
    • (2007) SPIE , vol.4691
    • Wu, M.H.1
  • 2
    • 0141722453 scopus 로고    scopus 로고
    • S.D. Hsu, et. al., 65nm full-chip implementation using double dipole lithography SPIE 2003, 5040 3. C.W. Michael Hsu, st. al, Lithography Manufacturing Implementation for 65nm and 45nm Nodes With Model-Based Scattering Bars Using IML Technology SPIE 2005
    • S.D. Hsu, et. al., "65nm full-chip implementation using double dipole lithography" SPIE 2003, vol.5040 3. C.W. Michael Hsu, st. al, "Lithography Manufacturing Implementation for 65nm and 45nm Nodes With Model-Based Scattering Bars Using IML Technology" SPIE 2005
  • 3
    • 0036415722 scopus 로고    scopus 로고
    • Patterning Half-wavelength DRAM cell using Chromeless Phase Lithography (CPL)
    • Chungwei Hsu et .al., "Patterning Half-wavelength DRAM cell using Chromeless Phase Lithography (CPL)", SPIE Vol. 4691, pp 76-88, 2002
    • (2002) SPIE , vol.4691 , pp. 76-88
    • Hsu, C.1    et, .al.2
  • 4
    • 1842475075 scopus 로고    scopus 로고
    • Near 0.3 kl full pitch contact hole patterning using chromeless phase lithography (CPL)
    • Doug van den Broeke et .al., "Near 0.3 kl full pitch contact hole patterning using chromeless phase lithography (CPL)", SPIE Vol. 5256, pp 297-308, 2003
    • (2003) SPIE , vol.5256 , pp. 297-308
    • Doug van den Broeke1    et, .al.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.