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Volumn 6924, Issue , 2008, Pages
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Manufacturing implementation of 32nm SRAM using ArF immersion with RET
a a a a a a a c c b c |
Author keywords
CD uniformity; Double patterning technique(DPT); Optical proximity correction (OPC); Resolution enhancement technique (RET)
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Indexed keywords
(E ,3E) PROCESS;
CONTROL METHODOLOGY;
DESIGN RULES;
EMPIRICAL DATA;
EXPOSURE PARAMETERS;
EXPOSURE TOOLS;
HYPER-NA;
IMMERSION EXPOSURE;
IMMERSION PROCESSING;
MASK DATA;
MASK DATA PREPARATION (MDP);
MASK DESIGNS;
MASK MAKING;
METAL LAYERS;
OPTICAL MICRO LITHOGRAPHY;
PATTERN SIZES;
POLY (PSS) ,;
PROCESS DEVELOPMENTS;
PROCESS PERFORMANCE;
PROCESS WINDOWS;
PRODUCTION ENVIRONMENTS;
RESOLUTION-ENHANCEMENT TECHNOLOGY (RET);
SEMICONDUCTOR MANUFACTURING;
SRAM CELLS;
TARGET DESIGNS;
ULTRA HIGH NA;
WAFER PRINTING;
ARCHITECTURAL DESIGN;
COMPUTER NETWORKS;
IMAGE QUALITY;
LAWS AND LEGISLATION;
MULTITASKING;
NANOTECHNOLOGY;
OPTIMIZATION;
PHOTOLITHOGRAPHY;
PRINTING;
SODIUM;
SPECIFICATIONS;
STATIC RANDOM ACCESS STORAGE;
TECHNOLOGY;
WINDOWS;
MASKS;
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EID: 45449094393
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.773137 Document Type: Conference Paper |
Times cited : (5)
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References (4)
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