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Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 289-294

A study of the degree of relaxation of AlGaN epilayers on GaN template

(8) Zhang, J C a Wu, M F b Wang, J F a,c Liu, J P a Wang, Y T a Chen, J a Jin, R Q a Yang, H a

a INSTITUTE OF SEMICONDUCTORS (China)

b PEKING UNIVERSITY (China)

c WUHAN UNIVERSITY (China)

Author keywords

A3. Metalorganic chemical vapor deposition; Al. High resolution X ray diffraction; Al. Rutherford backscattering channeling; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; EXTRAPOLATION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOCHROMATORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; X RAY DIFFRACTION;

COMPRESSIVE STRAIN; DIFFRACTION PEAKS; EPILAYERS; LATTICE MISFIT;

ALUMINUM COMPOUNDS;

EID: 4544369827 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.06.028 Document Type: Article

Times cited : (7)

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