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Volumn 10, Issue SUPPL. 2, 2004, Pages 1142-1143

FIB preparation for HRTEM: GaN based devices

Author keywords

[No Author keywords available]

Indexed keywords


EID: 4544367211     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/S1431927604881844     Document Type: Conference Paper
Times cited : (7)

References (5)
  • 3
    • 0003521686 scopus 로고    scopus 로고
    • Springer, Berlin
    • nd Edition, Springer, Berlin (1998) 212.
    • (1998) nd Edition , pp. 212
    • Reimer, L.1
  • 5
    • 4544254860 scopus 로고    scopus 로고
    • note
    • This research was supported by the Office of Science, US Department of Energy under a CRADA (Cooperative Research and Development Agreement) between Lawrence Berkeley National Laboratory (LBNL) and Lumileds Lighting, San Jose / CA under US DOE Contract DE-AC03-76SF00098. J.R. Jinschek was supported by a Feodor-Lynen-Fellowship of the Alexander von Humboldt-Foundation (Germany).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.