Modelling of sacrificial aluminium etching in complex geometries

Journal of Micromechanics and Microengineering

Volumn 14, Issue 9, 2004, Pages

  Salo, T ^a   Vancura T ^a   Baltes, H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; BOUNDARY CONDITIONS; CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; ETCHING; GEOMETRY; MICROMACHINING; SENSORS;

ALUMINIUM ETCHING; ETCH RATE; SACRIFICIAL LAYERS; SENSOR ARRAYS;

ALUMINUM COMPOUNDS;

EID: 4544335987     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/14/9/021     Document Type: Conference Paper

References (10)

1. Bustillo J M, Howe R T and Muller R S 1998 Surface micromachining for microelectromechanical systems Proc. IEEE 86 1552-74
2. Fujinaga M, Kotani N, Kunikyo T, Oda H, Shirahata M and Akasaka Y 1990 Three-dimensional topography simulation model: etching and lithography IEEE Trans. Electron Devices 37 2183-92
3. Monk D J, Soane D S and Howe R T 1994 Hydrofluoric acid etching of silicon dioxide sacrificial layers II. Modeling J. Electrochem. Soc. 141 270-4
4. Li W J, Shih J C, Mai J D and Ho C-M 1998 Numerical simulation for the sacrificial release of MEMS square diaphragms 1st Int. Conf. on MSMSSA (San Jose, CA)
5. Westberg D, Paul O, Andersson G I and Baltes H 1996 Surface micromachining by sacrificial aluminium etching J. Micromech. Microeng. 6 376-84
6. Salo T, Vancura T, Brand O and Baltes H 2003 Proc. IEEE Micro Electro Mechanical Systems (Kyoto) pp 590-3
7. Gray B L and Fearing R S 1996 A surface micromachined microtactile sensor array IEEE Int. Conf. on Robotics and Automation
8. Kane B J, Cutkosky M R and Kovacs G T A 2000 A traction stress sensor array for use in high-resolution robotic tactile imaging J. Microelectromech. Syst. 9 425-34
9. Sze S M (ed) 1988 VLSI Technology 2nd edn (New York: McGraw-Hill)
10. Kloek B, Collins S D, de Rooij N F and Smith R L 1989 Study of electrochemical etch-stop for high-precision thickness control of silicon membranes IEEE Trans. Electron Devices 36 663-9