-
1
-
-
0003579922
-
A metal-oxide-semiconductor (MOS) Hall element
-
R.C. Gallagher and W.S. Corak, A metal-oxide-semiconductor (MOS) Hall element, Solid-State Electron., 9 (1966) 571-580.
-
(1966)
Solid-state Electron.
, vol.9
, pp. 571-580
-
-
Gallagher, R.C.1
Corak, W.S.2
-
2
-
-
0026170106
-
General characteristics and current output mode of a MOS magnetic field sensor
-
X. Zheng and S. Wu, General characteristics and current output mode of a MOS magnetic field sensor, Sensors and Actuators A, 28 (1991) 1-5.
-
(1991)
Sensors and Actuators A
, vol.28
, pp. 1-5
-
-
Zheng, X.1
Wu, S.2
-
4
-
-
0022087133
-
Two-dimension numerical modeling of magnetic-field sensors in CMOS technology
-
A. Nathan, A.M.J. Huiser and H. P. Baltes, Two-dimension numerical modeling of magnetic-field sensors in CMOS technology, IEEE Trans. Electron Devices, ED-32 (1985) 1212-1218.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 1212-1218
-
-
Nathan, A.1
Huiser, A.M.J.2
Baltes, H.P.3
-
5
-
-
0026899712
-
A novel 3-D magnetic-field sensors in standard CMOS technology
-
D. Misra, M. Zhang and Z. Cheng, A novel 3-D magnetic-field sensors in standard CMOS technology, Sensors and Actuators A, 34 (1992) 67-75.
-
(1992)
Sensors and Actuators A
, vol.34
, pp. 67-75
-
-
Misra, D.1
Zhang, M.2
Cheng, Z.3
-
6
-
-
0025699048
-
-
A. Chovet, Ch.S. Roumenin, G. Dimopoulos and N. Mathieu, Comparison of noise properties of different magnetic-field semiconductor integrated sensors, Sensors and Actuators, A21-A23 (1990) 790-794.
-
(1990)
Comparison of Noise Properties of Different Magnetic-field Semiconductor Integrated Sensors, Sensors and Actuators
, vol.A21-A23
, pp. 790-794
-
-
Chovet, A.1
Roumenin, Ch.S.2
Dimopoulos, G.3
Mathieu, N.4
-
7
-
-
0026850541
-
Noise and resolution of semiconductor integrated magnetic sensors
-
A. Chovet and N. Mathieu, Noise and resolution of semiconductor integrated magnetic sensors, Sensors and Actuators A, 32 (1992) 682-687.
-
(1992)
Sensors and Actuators A
, vol.32
, pp. 682-687
-
-
Chovet, A.1
Mathieu, N.2
-
8
-
-
0026851516
-
Si MAGFET optimized for sensitivity and noise properties
-
N. Mathieu, P. Giordano and A. Chovet, Si MAGFET optimized for sensitivity and noise properties, Sensors and Actuators A, 32 (1992) 656-660.
-
(1992)
Sensors and Actuators A
, vol.32
, pp. 656-660
-
-
Mathieu, N.1
Giordano, P.2
Chovet, A.3
-
9
-
-
0024735272
-
Highly sensitive split-contact magnetoresistor with AlAs/GaAs superlattice structures
-
Y. Sugiyama, H. Soga, M. Tacano and H. P. Baltes, Highly sensitive split-contact magnetoresistor with AlAs/GaAs superlattice structures, IEEE Trans. Electron Devices, ED-36 (1989) 1639-1643.
-
(1989)
IEEE Trans. Electron Devices
, vol.ED-36
, pp. 1639-1643
-
-
Sugiyama, Y.1
Soga, H.2
Tacano, M.3
Baltes, H.P.4
-
10
-
-
0003832103
-
-
Prentice-Hall, Englewood Cliffs, NJ
-
S. Wang, Fundamentals of Semiconductor Theory and Device Physics, Prentice-Hall, Englewood Cliffs, NJ, 1989, pp. 434-436.
-
(1989)
Fundamentals of Semiconductor Theory and Device Physics
, pp. 434-436
-
-
Wang, S.1
-
12
-
-
0023345328
-
A mobility model for submicrometer MOSFET device simulations
-
A. Hiroki, S. Odanaka, K. Ohe and H. Esaki, A mobility model for submicrometer MOSFET device simulations, IEEE Electron Device Lett., EDL-8 (1987) 231-233.
-
(1987)
IEEE Electron Device Lett.
, vol.EDL-8
, pp. 231-233
-
-
Hiroki, A.1
Odanaka, S.2
Ohe, K.3
Esaki, H.4
-
13
-
-
0028548705
-
Reconciliation of different gate-voltage dependencies of 1/fnoise in n-MOS and p-MOS transistors
-
J.H. Scofield, N. Borland and D.M. Fleetwood, Reconciliation of different gate-voltage dependencies of 1/fnoise in n-MOS and p-MOS transistors, IEEE Trans. Electron Devices, 41 (1994) 1946-1952.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 1946-1952
-
-
Scofield, J.H.1
Borland, N.2
Fleetwood, D.M.3
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