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Volumn 57, Issue 1, 1996, Pages 9-13

High-resolution MOS magnetic sensor with thin oxide in standard submicron CMOS process

Author keywords

CMOS; Magnetic sensors; MOS

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; INTEGRATED CIRCUIT MANUFACTURE; MAGNETIC DEVICES; MOS DEVICES; OXIDES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SENSITIVITY ANALYSIS;

EID: 0030261596     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(96)01327-1     Document Type: Article
Times cited : (11)

References (13)
  • 1
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  • 2
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    • General characteristics and current output mode of a MOS magnetic field sensor
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    • Zheng, X.1    Wu, S.2
  • 3
    • 0026896731 scopus 로고
    • A 3-D vertical Hall magnetic-field sensor in CMOS technology
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    • Paranjape, M.1    Filanovsky, I.2    Ristic, Lj.3
  • 4
    • 0022087133 scopus 로고
    • Two-dimension numerical modeling of magnetic-field sensors in CMOS technology
    • A. Nathan, A.M.J. Huiser and H. P. Baltes, Two-dimension numerical modeling of magnetic-field sensors in CMOS technology, IEEE Trans. Electron Devices, ED-32 (1985) 1212-1218.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 1212-1218
    • Nathan, A.1    Huiser, A.M.J.2    Baltes, H.P.3
  • 5
    • 0026899712 scopus 로고
    • A novel 3-D magnetic-field sensors in standard CMOS technology
    • D. Misra, M. Zhang and Z. Cheng, A novel 3-D magnetic-field sensors in standard CMOS technology, Sensors and Actuators A, 34 (1992) 67-75.
    • (1992) Sensors and Actuators A , vol.34 , pp. 67-75
    • Misra, D.1    Zhang, M.2    Cheng, Z.3
  • 7
    • 0026850541 scopus 로고
    • Noise and resolution of semiconductor integrated magnetic sensors
    • A. Chovet and N. Mathieu, Noise and resolution of semiconductor integrated magnetic sensors, Sensors and Actuators A, 32 (1992) 682-687.
    • (1992) Sensors and Actuators A , vol.32 , pp. 682-687
    • Chovet, A.1    Mathieu, N.2
  • 8
    • 0026851516 scopus 로고
    • Si MAGFET optimized for sensitivity and noise properties
    • N. Mathieu, P. Giordano and A. Chovet, Si MAGFET optimized for sensitivity and noise properties, Sensors and Actuators A, 32 (1992) 656-660.
    • (1992) Sensors and Actuators A , vol.32 , pp. 656-660
    • Mathieu, N.1    Giordano, P.2    Chovet, A.3
  • 9
    • 0024735272 scopus 로고
    • Highly sensitive split-contact magnetoresistor with AlAs/GaAs superlattice structures
    • Y. Sugiyama, H. Soga, M. Tacano and H. P. Baltes, Highly sensitive split-contact magnetoresistor with AlAs/GaAs superlattice structures, IEEE Trans. Electron Devices, ED-36 (1989) 1639-1643.
    • (1989) IEEE Trans. Electron Devices , vol.ED-36 , pp. 1639-1643
    • Sugiyama, Y.1    Soga, H.2    Tacano, M.3    Baltes, H.P.4
  • 12
    • 0023345328 scopus 로고
    • A mobility model for submicrometer MOSFET device simulations
    • A. Hiroki, S. Odanaka, K. Ohe and H. Esaki, A mobility model for submicrometer MOSFET device simulations, IEEE Electron Device Lett., EDL-8 (1987) 231-233.
    • (1987) IEEE Electron Device Lett. , vol.EDL-8 , pp. 231-233
    • Hiroki, A.1    Odanaka, S.2    Ohe, K.3    Esaki, H.4
  • 13
    • 0028548705 scopus 로고
    • Reconciliation of different gate-voltage dependencies of 1/fnoise in n-MOS and p-MOS transistors
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    • Scofield, J.H.1    Borland, N.2    Fleetwood, D.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.