ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Volumn , Issue , 2002, Pages 191-192

  Ogata, K ^a   Koike, K ^a   Tanite, T ^a   Komuro, T ^a   Yan, F ^a   Sasa, S ^a   Inoue, M ^a   Yano, M ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GROWTH TEMPERATURE; HEAT TREATMENT; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SAPPHIRE; SURFACE ROUGHNESS; TEMPERATURE;

A-PLANE SAPPHIRE; HIGH TEMPERATURE; LOW TEMPERATURES; OXYGEN PLASMAS; ROOT MEAN SQUARE ROUGHNESS; SAPPHIRE SUBSTRATES; TWIN STRUCTURE; ZNO BUFFER LAYER;

ZINC OXIDE;

EID: 84968654813     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MBE.2002.1037824     Document Type: Conference Paper

References (1)

1. K. Koike et. al., to be published at the proceedings of MRS fall meeting 2001.