SiO2 aerogel ultra low k dielectric patterning using different hard mask concepts and stripping processes

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 8-15

  Blaschta, F ^a   Schulze, K ^a   Schulz, S E ^a   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Dielectric thin films; H 2 N2 strip; Integrated circuit interconnections; Low dielectric constant; Plasma etching; Porous materials; SiO2 aerogel

Indexed keywords

AEROGELS; DIELECTRIC FILMS; ELECTRIC POWER SYSTEM INTERCONNECTION; HYDROGEN; INTEGRATED CIRCUITS; NITROGEN; PERMITTIVITY; PLASMA ETCHING; POROUS MATERIALS; THIN FILMS;

DIELECTRIC THIN FILMS; INTEGRATED CIRCUIT INTERCONNECTIONS; LOW DIELECTRIC CONSTANT; SIO2 AEROGELS;

SILICA;

EID: 4544315970     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.013     Document Type: Conference Paper

References (9)

1. International Technology Roadmap for Semiconductors (ITRS) 2003 update, Int. Sematech & SIA, Austin, Texas, 2003. Available from: 〈www.public.itrs.net〉.
2. T.E.F.M. Standaert, et al., J. Vac. Sci. Technol. A 18 (2000) 2742-2748.
3. S.-J. Wang et al., J. Korean Phys. Soc. 33 (1998) suppl. S135-137.
4. S.E. Schulz et al., in: Conference Proceedings ULSI XIV, Advanced Metallization Conference in 1998, MRS Warrendale, PA, 1999, pp. 485-490.
5. M. Hiroi et al., Proc. IITC 2001 Piscataway, NJ, 10 (2001) 295-7.
6. K. Schulze et al., Improvement of mechanical integrity of ultra low k dielectric stack and CMP compatibility, this issue, doi:10.1016/j.mee.2004.07. 026 Microelectron. Eng.
7. S.E. Schulz et al., in: Conference Proceedings ULSI XIX, Advanced Metallization Conference in 2003, MRS Warrendale, PA, 2004, pp. 97-105.
8. Y.S. Mor, et al., J. Vac. Sci. Technol. B 20 (4) (2002) 1334-1338.
9. E. Kondoh, et al., J. Vac. Sci. Technol. B 18 (3) (2000) 1276-1280.