Improvement of mechanical integrity of ultra low k dielectric stack and CMP compatibility

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 38-45

  Schulze, K ^a   Schulz, S E ^a   Fruhauf S ^a   Korner H ^b   Seidel, U ^b   Schneider, D ^c   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c FRAUNHOFER INSTITUTE FOR MATERIAL AND BEAM TECHNOLOGY IWS   (Germany)

Author keywords

Dielectric thin films; Low dielectric constant; Metallization; Permittivity; Porous materials; SiO 2 Aerogel

Indexed keywords

DIELECTRIC STACKS; DIELECTRIC THIN FILMS; LOW DIELECTRIC CONSTANT; SIO2 AEROGELS;

ACOUSTIC WAVES; AEROGELS; CROSSTALK; DIELECTRIC FILMS; METALLIZING; MICROELECTRONICS; PERMITTIVITY; PLASMAS; POROUS MATERIALS; SURFACE WAVES; THIN FILMS;

SILICA;

EID: 4544260383     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.026     Document Type: Conference Paper

References (3)

1. S. Frühauf, I. Streiter, S.E. Schulz, C. Himcinschi, M. Friedrich, T. Gessner, D.R.T. Zahn, in: Conf. Proc. ULSI XVII, Materials Research Society, Warrendale, 2002, pp. 287-294.
2. S.E. Schulz, F. Blaschta, B. Eisener, S. Frühauf, K. Schulze, U. Seidel, H. Körner, T. Gessner, in: Proceedings of the Advanced Metallization Conference 2003, Materials Research Society, Warrendale, 2004 (to be published).
3. F. Vaz, S. Carvalho, L. Rebuta, M.Z. Silva, A. Paul, D. Schneider, Thin Solid Films 408 (2002) 160-168.