Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3)

Surface Science

Volumn 566-568, Issue 1-3 PART 1, 2004, Pages 94-99

  Flege, J I ^a,b   Schmidt, Th ^b   Materlik, G ^c   Falta, J ^b  

^a DESY   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

^c DIAMOND LIGHT SOURCE LTD   (United Kingdom)

Author keywords

Chlorine; Etching; High index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; CHLORINE; DRY ETCHING; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS;

DENSITY-FUNCTIONAL THEORY (DFT); HIGH INDEX SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION; TOPOGRAPHY;

SURFACE STRUCTURE;

EID: 4544272691     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.05.028     Document Type: Conference Paper

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