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Volumn 401, Issue 1, 1998, Pages

Gas source homoepitaxy on Si(113) - The interrelation of H-induced reconstructions and growth morphology

Author keywords

Chemical vapor deposition; Epitaxy; Growth; high index single crystal surfaces; Scanning tunneling microscopy; Silane; Silicon; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DESORPTION; HYDROGEN; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SILANES; SINGLE CRYSTALS; SURFACE ROUGHNESS;

GAS SOURCE HOMOEPITAXY; HIGH INDEX SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION; SURFACE TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 0032027213 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00071-5 Document Type: Article

Times cited : (9)

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