Capacitance enhancement by mesopore formation for sub 100nm deep trench DRAM technology

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 200-203

  Birner, A ^a   Franosch, M ^a   Goldbach, M ^a   Lehmann, V ^a   Schumann, D ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SOLID STATE DEVICES;

ARSENIC DOPING; CAPACITANCE ENHANCEMENT; DRAM TECHNOLOGY; ELECTROCHEMICAL METHOD; ETCHING TIME; MESOPORE FORMATION; SURFACE AREA; TRENCH CAPACITORS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84907818526     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194749     Document Type: Conference Paper

References (5)

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2. V. Lehmann, R. Stengl, A. Luigart, .,On the morphology and the electrochemical formation mechanism of mesoporous silicon", Materials Science & Engineering BSolid State Materials for Advanced Technology 69 (2000) pp. 11-22
3. V. Lehmann, .,The Physics of Macropore Formation in Low Doped n-Type Silicon", J. Electrochem. Soc. 140 (1993) pp.2836-2843
4. V. Lehmann, W. Hönlein, H. Reisinger, A. Spitzer, H. Wendt, J. Willer, .,A Novel Capacitor Technology based on Porous Silicon", Thin Solid Films 276 (1996) 138
5. V. Parkhutik, .,Porous silicon-mechanisms of growth and applications", Solid-State Electronics 43 (1999) 1121