Transient characteristics of integrated dipole antennas on silicon for ultra wideband wireless interconnects

IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)

Volumn 3, Issue , 2004, Pages 2277-2280

  Watanabe, S ^a   Kimoto, K ^a   Kikkawa, T ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDATION; SEMICONDUCTING SILICON; SIGNAL RECEIVERS; SIGNAL THEORY; TRANSMITTERS; ULSI CIRCUITS; WIRELESS TELECOMMUNICATION SYSTEMS;

GAUSSIAN PULSES; INTEGRATED DIPOLE ANTENNAS; WIDEBAND WIRELESS INTERCONNECTS;

ANTENNAS;

EID: 4544229538     PISSN: 15223965     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/aps.2004.1331825     Document Type: Conference Paper

References (8)

1. R. H. Dennard et al, IEEE J. Solid-state Circuits, SC-9, 256 (1974).
2. M. Bohr and Y. A. Elmansy, IEEE Trans. Electron Devices, vol.45, 620, (1998).
3. Y. Oku et al, Technical Digest of IEEE International Electron Devices Meeting, Dec. 2003, pp. 139-142.
4. B.A. Floyd, C. Hung and Kenneth K.O, IEEE 3. Solid-State Circuits, Vol. 37, May 2002, pp. 543-552.
5. A.B.M. H. Rashid et al, IEEE Electron Devices Lett. Vol. 23, Dec. 2002, pp.731-733.
6. A.B.M. H. Rashid et al, Japanese Journal of Applied Physics, Vol. 42, No. 4B, April 2003, pp. 2204-2209.
7. T. Kikkawa et al, Abstracts of IEEE Topical Conference on Wireless Communication Technology, Honolulu, Hawaii, Oct. 15-17, 2003.
8. Norbert Daniele, Technical Tutorial, Ultra Wideband Summit 2003, 2-5 Dec. 2003.