Analysis of the variation in the composition as a function of growth parameters in the MBE growth of indium doped Hg1-xCdxTe

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 504-506

  Vydyanath, H R ^a   Aqariden, F ^b   Wijewarnasuriya, P S ^b   Sivananthan, S ^b   Chambers, G ^c   Becker, L ^c  

^a Avyd Devices Inc   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c US Army Space and Missile Defense Command   (United States)

Author keywords

Doping; HgCdTe; Molecular beam epitaxy (MBE)

Indexed keywords

EID: 0141445718     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0005-7     Document Type: Article

References (2)

1. R. Hultgren et al., Selected Values of Thermodynamic Properties of Metals and Alloys, (New York: Wiley, 1963), p. 751.
2. R. Hultgren et al., Selected Values of Thermodynamic Properties of Metals and Alloys, (New York: Wiley, 1963), p. 133.