Short-period InAs/GaSb superlattices for mid-infrared photodetectors

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 5, 2007, Pages 1702-1706

  Haugan, H J ^a   Szmulowicz, F ^a   Brown, G J ^a   Ullrich, B ^b   Munshi, S R ^a   Wickett, J C ^c   Stokes, D W ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b BOWLING GREEN STATE UNIVERSITY   (United States)

^c University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATIONS.; BAND-EDGE ABSORPTION; COMPOUND SEMICONDUCTORS; DETECTOR NOISE; ENVELOPE FUNCTION APPROXIMATION; INAS/GASB; INTERFACE EFFECTS; INTERNATIONAL SYMPOSIUM; MID INFRARED DETECTORS; MID-INFRARED PHOTODETECTORS; OPTICAL SIGNALLING; PHOTO-LUMINESCENCE MEASUREMENTS; ROOM TEMPERATURE OPERATION; UNCOOLED;

ABSORPTION; ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; CRYSTAL GROWTH; CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; INFRARED DETECTORS; INFRARED DEVICES; KETONES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR MATERIALS; SEPARATION; SONOLUMINESCENCE;

MOLECULAR BEAM EPITAXY;

EID: 45149105658     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674250     Document Type: Conference Paper

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