Dislocation network at InN/GaN interface revealed by scanning tunneling microscopy

Applied Physics Letters

Volumn 92, Issue 23, 2008, Pages

  Liu, Y ^a   Cai, Y ^b   Zhang, Lixin ^c   Xie, M H ^a   Wang, N ^b   Zhang, S B ^c   Wu, H S ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; CRYSTAL GROWTH; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRON OPTICS; ELECTRON TUNNELING; ELECTRONIC STATES; EPITAXIAL GROWTH; EXCAVATION; GALLIUM ALLOYS; GALLIUM NITRIDE; IMAGING TECHNIQUES; METROPOLITAN AREA NETWORKS; MICROSCOPES; MOLECULAR BEAM EPITAXY; NETWORK PROTOCOLS; SCANNING; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SPECTROSCOPIC ANALYSIS; SURFACE DEFECTS; SURFACE PROPERTIES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TUNNELING (EXCAVATION);

(1 1 0) SURFACE; AMERICAN INSTITUTE OF PHYSICS (AIP); DISLOCATION NETWORK (DN); EPIFILMS; HETERO-EPITAXY; INN EPIFILMS; LATTICE MISFIT STRAIN; LOCAL STRAINS; MISFIT DISLOCATION (MD); SCANNING TUNNELING MICROSCOPY (STM); SURFACE DISTORTIONS;

MICROSCOPIC EXAMINATION;

EID: 45149100466     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2944145     Document Type: Article

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