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Volumn 299-302, Issue , 2002, Pages 599-604
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Reverse bias annealing of Schottky diodes: Evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
ANNEALING;
CAPACITANCE;
CRYSTAL DEFECTS;
CRYSTAL MICROSTRUCTURE;
HYDROGENATION;
POLYSILICON;
SHORT CIRCUIT CURRENTS;
DEFECT DENSITY;
REVERSE BIAS ANNEALING (RBA);
SCHOTTKY BARRIER DIODES;
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EID: 0036539027
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(01)01025-0 Document Type: Article |
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Times cited : (12)
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References (14)
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