Design, fabrication and application of 4H-SiC trenched-and-Lmplanted vertical JFETs

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1191-1194

  Zhao, Jian H ^a   Alexandrov, Petre ^b   Li, Yuzhu ^a   Li, Larry ^b   Sheng, Kuang ^a   Lebron Velilla, Ramon ^c  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

^c NASA GLENN RESEARCH CENTER   (United States)

Author keywords

High efficiency; High temperature; JFETs; Low resistance

Indexed keywords

ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; PRODUCT DESIGN; SILICON CARBIDE; THERMAL EFFECTS;

SOFT SWITCHING SCHEME; THICKNESS UNIFORMITY;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 37849040461     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1191     Document Type: Conference Paper

References (6)

1. J. H. Zhao, US patent No. 6,107,649, "Field-controlled high-power semiconductor devices", Aug. 22, 2000.
2. P. Friedrichs, et al.: "Application-oriented unipolar switching SiC devices, " Materials Science Forum Vols. 389-393 (2002), p. 1185.
3. 2 4H-SiC trenched and implanted vertical junction field-effect transistors" IEEE Electron Device Letters. Vol. 24(2), (February 2003), p. 81.
4. J. H. Zhao, P. Alexandrov, J. Zhang, and X. Li: IEEE, Electron Device Letters Vol: 25, Issue: 7 (July 2004), pp. 474-476.
5. 2 ISPSD' 2002, p. 61.
6. K. Sheng, et al.: "Thermal stability of IGBT high frequency operation", IEEE Transactions on Industrial Electronics, (Feb. 2000), p. 9