Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Lu, H L ^a,b   Scarel, G ^b   Alia, M ^b   Fanciulli, M ^b   Ding, Shi Jin ^a   Zhang, David Wei ^a  

^a FUDAN UNIVERSITY   (China)

^b LABORATORIO MDM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; ELLIPSOMETRY; ENERGY GAP; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING CADMIUM TELLURIDE; SILICON; SPECTROSCOPIC ELLIPSOMETRY; STEEL ANALYSIS; THIN FILMS;

(PL) PROPERTIES; AMERICAN INSTITUTE OF PHYSICS (AIP); ANNEALING TEMPERATURE (TA); AS-DEPOSITED; ATOMIC LAYERS; BAND GAPS; FILM SHIFTS; HIGH-TEMPERATURE ANNEALING; INDIRECT BAND-GAP; NIO FILMS; OPTICAL (PET) (OPET); PHOTON ENERGIES; SI(1 0 0 ); SPECTRAL REGIONS;

OPTICAL FILMS;

EID: 44849109526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2938697     Document Type: Article

References (16)

1. R. J. Powell and W. E. Spicer, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.2.2182 2, 2182 (1970).
2. R. H. Kodama, S. A. Makhlouf, and A. E. Berkowitz, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.79.1393 79, 1393 (1997).
3. C. M. Lampert, Mater. Today MTOUAN 1369-7021 10.1016/S1369-7021(04)00123- 3 7, 28 (2004).
4. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1831560 85, 5655 (2004).
5. Y.-H. You, B.-S. So, J.-H. Hwang, W. Cho, S. S. Lee, T.-M. Chung, C. G. Kim, and K.-S. An, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2392991 89, 222105 (2006).
6. G. E. Jellison, Jr. and F. A. Modine, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118064 69, 371 (1996); G. E. Jellison, Jr. and F. A. Modine Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118155 69, 2137 (1996).
7. G. He, L. D. Zhang, G. H. Li, M. Liu, L. Q. Zhu, S. S. Pan, and Q. Fang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1927716 86, 232901 (2005).
8. D. A. G. Bruggemann, Ann. Phys. ANPYA2 0003-3804 10.1002/andp.19354160705 24, 636 (1935).
9. A. M. Lopez-Beltran and A. Mendoza-Galvan, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2005.11.031 54, 40 (2006).
10. D. Franta, B. Negulescu, L. Thomas, P. R. Dahoo, M. Guyot, I. Ohlidal, J. Mistrik, and T. Yamaguchi, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/j.apsusc.2004.09.150 244, 426 (2005).
11. B. Sasi and K. G. Gopchandran, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/18/11/115613 18, 115613 (2007).
12. J. C. Tauc, Optical Properties of Solids (North-Holland, Amsterdam, 1972).
13. D. Adler and J. Feinlieb, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.2.3112 2, 3112 (1970).
14. H. Kamal, E. K. Elmaghraby, S. A. Ali, and K. Abdel-Hady, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2003.10.090 262, 424 (2004).
15. A. J. Varkey and A. F. Fort, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(93)90241-G 235, 47 (1993).
16. J. George, C. K. Valsala Kumari, and K. S. Joseph, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.332711 54, 5347 (1983).