Negative differential resistance and tunable peak-to-valley ratios in a silicon nanochain

Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

  Sun, Z Z ^a   Wang, X R ^b   Zhang, R Q ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES;

NANOCHAIN STRUCTURE; NEGATIVE DIFFERENTIAL CONDUCTANCE (NDC; POTENTIAL BARRIERS; SILICON NANOCHAINS;

SILICA;

EID: 44649196508     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936321     Document Type: Article

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