Modification of ZnO films under high energy Xe-ion irradiations

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 12-13, 2008, Pages 2863-2867

  Zang, H ^a,b   Wang, Z G ^a   Peng, X P ^a,c   Song, Y ^a   Liu, C B ^a,b   Wei, K F ^a,b   Zhang, C H ^a   Yao, C F ^a   Ma, Y Z ^a   Zhou, L H ^a   Sheng, Y B ^a   Gou, J ^a  

^a INSTITUTE OF MODERN PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c LANZHOU UNIVERSITY   (China)

Author keywords

FESEM; Photoluminescence; RBS; Xe ion irradiation; XRD; ZnO films

Indexed keywords

ION BOMBARDMENT; MAGNETRON SPUTTERING; MOLECULAR ORIENTATION; PHOTOLUMINESCENCE; X RAY DIFFRACTION; ZINC OXIDE;

RADIO FREQUENCY MAGNETRON SPUTTERING; SURFACE CRACKS; XE-ION IRRADIATION;

OXIDE FILMS;

EID: 44649146442     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.03.131     Document Type: Article

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