Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes

Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

  Son, J K ^a   Lee, S N ^a   Paek, H S ^a   Sakong, T ^a   Kim, H K ^a   Park, Y ^a   Ryu, H Y ^b   Nam, O H ^c   Hwang, J S ^d   Cho, Y H ^d  

^a Samsung Electro Mechanics   (South Korea)

^b Inha University   (South Korea)

^c Korea Polytechnic University   (South Korea)

^d Chungbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT ABSORPTION; LUMINESCENCE; PHOTOEXCITATION; SUPERRADIANCE;

BV-LD WAFERS; EXCITATION LASERS; OPTICAL CONFINEMENT LAYERS (OCL); OPTICAL LOSS VARIATION;

SEMICONDUCTOR LASERS;

EID: 44649113733     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2931025     Document Type: Article

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