The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: The case of the warped bands

Journal of Physics A: Mathematical and Theoretical

Volumn 41, Issue 21, 2008, Pages

  La Rosa, Salvatore ^a   Romano, Vittorio ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44449134717     PISSN: 17518113     EISSN: 17518121     Source Type: Journal    
DOI: 10.1088/1751-8113/41/21/215103     Document Type: Article

References (33)

1. Markowich P, Ringhofer C A and Schmeiser C 1990 Semiconductor Equations (Wien: Springer)
2. Jerome J W 1996 Analysis of Charge Transport (Berlin: Springer)
3. Jüngel A 2001 Quasi-Hydrodynamic Semiconductor Equations (Basle: Birkhauser)
4. Blotekjaer K 1970 Transport equations for electron in two-valley semiconductors IEEE Trans. Electron Devices ED-17 38-47
5. Baccarani G and Wordeman M R 1982 An investigation on steady-state velocity overshoot in silicon Solid-State Electron. 29 970-7
6. Anile A M, Mascali G and Romano V 2003 Recent developments in hydrodynamical modeling of semiconductors Mathematical Problems in Semiconductor Physics (Lecture Notes in Mathematics vol 1832) (Berlin: Springer) pp 1-54
7. Stratton R 1962 Diffusion of hot and cold electrons in semiconductor barriers Phys. Rev. 126 2002-14
8. Chen D, Kan E C, Ravaioli U, Shu C-W and Dutton R 1992 An improved energy-transport model including nonparabolicity and non-Maxwellian distribution effects IEEE Electron Device Lett. 13 26-8
9. Lyumkis E, Polsky B, Shir A and Visocky P 1992 Transient semiconductor device simulation including energy balance equation COMPEL 11 311-25
10. Ben Abdallah N, Degond P and Genieys S 1996 An energy-transport model for semiconductors derived from the Boltzmann equation J. Stat. Phys. 84 205-31
11. Ben Abdallah N and Degond P 1996 On a hierarchy of macroscopic models for semiconductors J. Math. Phys. 37 3306-33
12. Lundstrom M and Guo J 2006 Nanoscale Transistor: Device Physics, Modeling, and Simulation (New York: Springer) at press
13. Hänsch W 1991 The Drift-diffusion Equation and Its Applications in MOSFET Modeling (Wien: Springer)
14. Selberherr S 1984 Analysis and Simulation of Semiconductor Devices (New York: Springer)
15. Anile A M and Romano V 1999 Non parabolic band transport in semiconductors: closure of the moment equations Contin. Mech. Thermodyn. 11 307-25
16. Romano V 2000 Non parabolic band transport in semiconductors: closure of the production terms in the moment equations Contin. Mech. Thermodyn. 12 31-51
17. Mascali G and Romano V 2002 Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle Contin. Mech. Thermodyn. 14 405-23
18. Mascali G, Sellier J M and Romano V 2005 MEP parabolic hydrodynamical model for holes in silicon semiconductors II Nuovo Cimento 120B 197-215
19. Gonzlez P, Carrillo J A and Gmiz F 2006 Deterministic Numerical Simulation of 1d kinetic descriptions of bipolar electron devices Scientific Computing in Electrical Engineering (Series: Mathematics in Industry Subseries) vol 9 The European Consortium for Mathematics in Industry ed A M Anile, G Ali and G Mascali (Berlin: Springer) pp 339-44
20. Liotta S F and Mascali G 2006 A hydrodynamical model for silicon bipolar devices 'WASCOM 2005'-13th Conf. on Waves and Stability in Continuous Media (Singapore: World Scientific) pp 322-7
21. Baranskii P I, Buda I S, Dakhovskii I V and Kolomets V V 1977 Electric and Galvanometric Phenomena in Anisotropic Semiconductors (Kiev: Naukova dumka)
22. Samoilovich A G, Korenblit I Ya, Dakhovskii I V and Iskra V D 1961 DAN SSSR 139 355
23. Ashcroft N W and Mermin N D 1976 Solid State Physics International Edition (Philadelphia: Sounders College Publishing)
24. Jacoboni C and Reggiani L 1983 The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials Rev. Mod. Phys. 55 645-705
25. Jacoboni C and Lugli P 1989 The Monte Carlo Method for Semiconductor Device Simulation (New York: Springer)
26. Fischetti M V and Laux S E 1996 Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys J. Appl. Phys. 80 2234-52
27. Anile A M and Muscato O 1995 Improved hydrodynamical model for carrier transport in semiconductors Phys. Rev. B 51 16728-40
28. Jaynes E T 1957 Information theory and Statistical Mechanics Phys. Rev. 106 620-30
29. Müller I and Ruggeri T 1998 Rational Extended Thermodynamics (Berlin: Springer)
30. Jou D, Casas-Vazquez J and Lebon G 1993 Extended Irreversible Thermodynamics (Berlin: Springer)
31. Levermore C D 1996 Moment closure hierarchies for kinetic theories J. Stat. Phys 83 331-407
32. Romano V 2001 Nonparabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices Math. Methods Appl. Sci. 24 439-71
33. Takeda K, Taguchi A and Sakata M 1983 Valence-band parameters and hole mobility of Ge-Si alloys-theory J. Phys. C: Solid State Phys. 16 2237-49