Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

Surface and Interface Analysis

Volumn 36, Issue 8, 2004, Pages 1203-1206

  Franta, D ^a   Ohlidal I ^a   Klapetek, P ^a,b   Ohlidal M ^c  

^a MASARYK UNIVERSITY   (Czech Republic)

^b CZECH METROLOGY INSTITUTE   (Czech Republic)

^c BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

Ellipsometry; GaAs oxide films; Optical constants; Reflectometry; AFM; Roughness

Indexed keywords

OPTICAL CONSTANTS; OXIDE FILMS; REFLECTOMETRY; THERMAL OXIDATION;

ATOMIC FORCE MICROSCOPY; COMPOSITION; DATA ACQUISITION; ELLIPSOMETRY; MATHEMATICAL MODELS; OXIDATION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SPECTROPHOTOMETERS; SUBSTRATES; SURFACE ROUGHNESS;

THIN FILMS;

EID: 4444357027     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1876     Document Type: Conference Paper

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