A new reference signal generation method for MRAM using a 90-degree rotated MTJ

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2628-2630

  Jeong, W C ^a   Kim, H J ^a   Park, J H ^a   Jeong, C W ^a   Lee, E Y ^a   Oh, J H ^a   Jeong, G T ^a   Koh, G H ^a   Koo, H C ^a   Lee, S H ^a   Lee, S Y ^a   Shin, J M ^a   Jeong, H S ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Magnetic random access memory (MRAM); Magnetic tunnel junction (MTJ); Reference cell; Tunneling magnetoresistance (TMR)

Indexed keywords

ANISOTROPY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; MAGNETORESISTANCE; MAGNETRON SPUTTERING; SIGNAL GENERATORS; SIGNAL THEORY; TRANSISTORS; TUNNEL JUNCTIONS;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTION (MTJ); REFERENCE CELL; TUNNELING MAGNETORESISTANCE (TMR);

RANDOM ACCESS STORAGE;

EID: 4444334716     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.829328     Document Type: Article

References (6)

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